Lab recent activities

Congratulations to Morikawa for his bachelor graduation!
His graduate thesis focused on novel quantum Hall

physics in InAs/GaFeSb heterostructures.

These exciting and high-impact results are to be

published soon!

Very well-deserved results for his hardwork

and competency. Keep on with good work!

​

​

Associate Professor Le Duc Anh has been selected as a "Distinguished Researcher" of the University of Tokyo for the 2022 academic year.
https://www.u-tokyo.ac.jp/focus/ja/articles/t_z1402_00012.html
This is based on the University of Tokyo's "Support Program for Young Researchers' Independence (The University of Tokyo Distinguished Researchers)", which aims to support outstanding young researchers to start up their research activities.

Our recent work "Gate-controlled proximity magnetoresistance in In(1-x)Ga(x)As/(Ga,Fe)Sb bilayer heterostructures" has been published online in the 15 June 2022 issue of Physical Review B (Vol. 105, No. 23):
URL: https://link.aps.org/doi/10.1103/PhysRevB.105.235202
DOI: 10.1103/PhysRevB.105.235202

Summary of the work:

The magnetic proximity effect (MPE), ferromagnetic coupling at the interface of magnetically dissimilar layers, attracts much attention as a promising pathway for introducing ferromagnetism into a high-mobility non-magnetic conducting channel. Recently, our group found giant proximity magnetoresistance (PMR), which is caused by MPE at an interface between a non-magnetic semiconductor InAs quantum well (QW) layer and a ferromagnetic semiconductor (Ga,Fe)Sb layer. The MPE in the non-magnetic semiconductor can be modulated by applying a gate voltage and controlling the penetration of the electron wavefunction in the InAs QW into the neighboring insulating ferromagnetic (Ga,Fe)Sb layer. However, optimal conditions to obtain strong MPE at the InAs/(Ga,Fe)Sb interface have not been clarified. In this paper, we systematically investigate the PMR properties of In1-xGaxAs (x = 0%, 5%, 7.5%, and 10%) / (Ga,Fe)Sb bilayer semiconductor heterostructures under a wide range of gate voltage. Our experimental results and theoretical analysis of the PMR in these In1­−xGaxAs/(Ga,Fe)Sb heterostructures show that the MPE depends not only on the degree of penetration of the electron wavefunction into (Ga,Fe)Sb but also on the electron density. These findings help us to unveil the microscopic mechanism of MPE in semiconductor-based non-magnetic/ferromagnetic heterojunctions.

​

Prof. Le Duc Anh received the Young Investigator MBE Award, at the International Conference on Molecular Beam Epitaxy, ICMBE 2022.
The citation is ”MBE growth, physics and devices of new Fe-based III-V ferromagnetic semiconductors for semiconductor spintronics and topological quantum electronics”.
https://iop.eventsair.com/icmbe2022/awards

Tomoki Hotta (1st year, Ph.D. student, Department of Electrical Engineering and Information Systems, Tanaka Laboratory) received the Outstanding Student MBE Award for the following oral presentation at the International Conference on Molecular Beam Epitaxy 2021:
T. Hotta, K. Takase, K. Takiguchi, K. Sriharsha, L. D. Anh, and M. Tanaka
“Quaternary-alloy ferromagnetic semiconductor (In,Ga,Fe)Sb”
21st International Conference on Molecular Beam Epitaxy, Virtual Conference, Mexico, September 6-9, 2021.

This work is a collaboration between Anh lab and Tanaka lab. Congratulations to Hotta-kun!

​

Anh Lab officially starts.

Morikawa Ryo, currently an 4-year undergrad at EEIS, will join Anh lab for his graduation research. Warmly welcome, Morikawa-kun! 

Anh Lab’s research proposal has been accepted by the UTEC-Utokyo FSI Grant! A fund of 20,000,000 JPY will be sponsored in 2 years for our work on Superconductor/Ferromagnetic semiconductor hybrid structures. So excited!

We are recruiting enthusiastic students, both undergraduate (B4, from dept. of EEIS) and graduate students. Contact prof. Anh if you want to join us.