Research Facilities

We are merited by many shared facilities from the Tanaka-Ohya group, Cryogenic Research Center and Nanotechnology Platform of The University of Tokyo

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III - V Group Molecular Beam Epitaxy System (EQ2100)

Base pressure: 1×10^-10Torr

 

Installed sources:

Ga,Al,In(Group III)
Si, Be (Dopants)
Mn, Fe (Transition element, for magnetic material)
As(Group V) EPI Valved cracker cell 500 cc
Sb (group V) MBE Komponenten valved cracker cell 420 cc

In-situ observation: Reflection High Energy Electron Diffraction (RHEED)

※ Using under collaboration with Tanaka lab

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Dirac-Materials Molecular Beam Epitaxy System (MBE508)

Base pressure: 1×10^-10Torr

 

Installed sources:

Ga,Al,In(Group III)
Sn, Bi, Fe 
As(Group V) EPI Valved cracker cell 500 cc
Sb (group V) K-cell

In-situ observation: Reflection High Energy Electron Diffraction (RHEED)

※ Using under collaboration with Tanaka lab

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Metal Molecular Beam Epitaxy System (System M)

Base pressure: 1×10^-9Torr

Substrate can be cooled using Liquid Nitrogen

◆ MBE chamber (4 ports): Fe,Al,Sn
◆ E-beam deposition chamber (3 pockets): SiO2, Nb, EuS

Available for Shadow-mask growth  

Magnetic Circular Dichroism (MCD) System – JASCO J700

Magnetotransport Measurement System (3 systems)

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◆ Photo-detector:GaAs, S1 Photomultiplier (wavelength range 0.2-1.1μm)

◆ Magnetic field range:~1.2T

◆ Temperature range:4.5K ~ RT

◆ Magnetic field range:~1T

◆ Temperature range:3.5K ~ RT

◆ Motor-driven Magnet Rotation System

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Oxford Inst. Superconducting Magnet System

Cryogen-free.

Magnetic field range:0~12T

Temperature range:295 mK ~ RT

Magnetic Properties

Measurement System 3

(common facility of Cryogenic Research Center)

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Magnetic field range:0~7T

Temperature range:1.5 K ~ RT

Electron Spin Resonance

(ESR) System

(common facility of Nanotechnology Platform)

Nano-device Fabrication Lab

(common facility of Dept. of EEIS)

Takeda Super-cleanroom

(common facility of Nanotechnology Platform,

the University of Tokyo)

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